Micron Technology has announced a first in the industry’s DDR3 LRDIMM memory (load-reduced, dual-inline memory module), designed for use in server systems. Thanks to reduce load on the tire LRDIMM memory module is able to support higher frequencies. In addition, it is significantly increasing memory capacity.
The production of new Micron DDR3 LRDIMM with a capacity of 16GB will use the latest 50 nm DDR3 memory chips from 2 Gbit density and working voltage of 1.35 volts. Use of these chips with high density and small size allows you to easily and effectively increase the capacity of the server memory. In addition, the new module has recently announced its use of isolation memory buffer (iMB-chip) production of Inphi, to reduce bus loading memory in the exchange of data between system memory and processor.
New LRDIMM DDR3 memory modules from Micron capacity of 8GB are currently undergoing qualification testing and have already delivered to individual consumers. The first samples of a new product with a capacity of 16GB will be already this fall, and the mass production of these modules is to begin in 2010.
Source
Micron Introduces a New Way to Increase Server Memory Capacity, Improve Performance
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