Samsung PRAM, deliver new generation memory in June
Samsung announced the start of deliveries in June of the next generation of so-called PRAM memory. Currently, the technology presented in the form of chip capacity of 512 MB.
PRAM (Phase-change Random Access Memory, memory based on the phase transition) Technology combines the advantages of NAND and NOR flash memory. For example, it combines high-speed random access, which is typical for the NOR memory to store data permanently in NAND chips. Thus, PRAM memory devices can be used in the accumulation and storage of information. According to Samsung, PRAM memory chips will be able to work up to thirty times faster than the usual combination of memory and RAM memory for permanent data storage.
PRAM technology developed on the basis of the properties chalcogenide glass, which can quickly move from the crystal in the amorphous form. This allows the PRAM memory to operate at high speed and at the same time preserve the current state of memory when you turn off the system.
Samsung has not yet been announced as a potential consumer of its PRAM memory. It is also mentioned, in what the products can be used this technology. However, it has the potential to be successfully used, for example, in mobile devices. Thus, precluded is need for them at the same time and RAM system memory, and permanent storage.
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Samsung to ship next-gen PRAM in June
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